Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces

C. H. Chiu; H. C. Kuo; C. E. Lee; C. H. Lin; B. S. Cheng; P. C. Cheng; H. W. Huang; T. C. Lu; S. C. Wang; K. M. Leung

doi:10.1149/1.2783875

Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces

C. H. Chiu, H. C. Kuo, C. E. Lee, C. H. Lin, B. S. Cheng, P. C. Cheng, H. W. Huang, T. C. Lu, S. C. Wang, K. M. Leung

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A novel GaN-based thin-film vertical injection light emitting diode (LED) structure with a TiO₂ and SiO₂ omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. At a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light output power and the external quantum efficiency of the LED with a TiO₂/Si02 ODR reaches 330 mW and 26.7%; increasing by 18% and 16%, respectively. The optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO₂/SiO₂ ODR within the blue regime.

Original language	English (US)
Title of host publication	ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices
Publisher	Electrochemical Society Inc.
Pages	219-224
Number of pages	6
Edition	5
ISBN (Electronic)	9781566775717
ISBN (Print)	9781566775717
DOIs	https://doi.org/10.1149/1.2783875
State	Published - 2007
Event	47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States Duration: Oct 7 2007 → Oct 12 2007

Publication series

Name	ECS Transactions
Number	5
Volume	11
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting
Country/Territory	United States
City	Washington, DC
Period	10/7/07 → 10/12/07

ASJC Scopus subject areas

Engineering(all)

Access to Document

10.1149/1.2783875

Cite this

Chiu, C. H., Kuo, H. C., Lee, C. E., Lin, C. H., Cheng, B. S., Cheng, P. C., Huang, H. W., Lu, T. C., Wang, S. C., & Leung, K. M. (2007). Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces. In ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices (5 ed., pp. 219-224). (ECS Transactions; Vol. 11, No. 5). Electrochemical Society Inc.. https://doi.org/10.1149/1.2783875

Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces. / Chiu, C. H.; Kuo, H. C.; Lee, C. E. et al.

ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5. ed. Electrochemical Society Inc., 2007. p. 219-224 (ECS Transactions; Vol. 11, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Chiu, CH, Kuo, HC, Lee, CE, Lin, CH, Cheng, BS, Cheng, PC, Huang, HW, Lu, TC, Wang, SC & Leung, KM 2007, Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces. in ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5 edn, ECS Transactions, no. 5, vol. 11, Electrochemical Society Inc., pp. 219-224, 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting, Washington, DC, United States, 10/7/07. https://doi.org/10.1149/1.2783875

Chiu CH, Kuo HC, Lee CE, Lin CH, Cheng BS, Cheng PC et al. Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces. In ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5 ed. Electrochemical Society Inc. 2007. p. 219-224. (ECS Transactions; 5). doi: 10.1149/1.2783875

Chiu, C. H. ; Kuo, H. C. ; Lee, C. E. et al. / Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces. ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices. 5. ed. Electrochemical Society Inc., 2007. pp. 219-224 (ECS Transactions; 5).

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title = "Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces",

abstract = "A novel GaN-based thin-film vertical injection light emitting diode (LED) structure with a TiO2 and SiO2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. At a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light output power and the external quantum efficiency of the LED with a TiO2/Si02 ODR reaches 330 mW and 26.7%; increasing by 18% and 16%, respectively. The optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO2/SiO2 ODR within the blue regime.",

author = "Chiu, {C. H.} and Kuo, {H. C.} and Lee, {C. E.} and Lin, {C. H.} and Cheng, {B. S.} and Cheng, {P. C.} and Huang, {H. W.} and Lu, {T. C.} and Wang, {S. C.} and Leung, {K. M.}",

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note = "47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting ; Conference date: 07-10-2007 Through 12-10-2007",

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AU - Kuo, H. C.

AU - Lee, C. E.

AU - Lin, C. H.

AU - Cheng, B. S.

AU - Cheng, P. C.

AU - Huang, H. W.

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AU - Wang, S. C.

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AB - A novel GaN-based thin-film vertical injection light emitting diode (LED) structure with a TiO2 and SiO2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. At a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light output power and the external quantum efficiency of the LED with a TiO2/Si02 ODR reaches 330 mW and 26.7%; increasing by 18% and 16%, respectively. The optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO2/SiO2 ODR within the blue regime.

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Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces

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