@inproceedings{32a6b8cf1bf744a39a8c010bfcd9ece4,
title = "Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces",
abstract = "A novel GaN-based thin-film vertical injection light emitting diode (LED) structure with a TiO2 and SiO2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. At a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light output power and the external quantum efficiency of the LED with a TiO2/Si02 ODR reaches 330 mW and 26.7%; increasing by 18% and 16%, respectively. The optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO2/SiO2 ODR within the blue regime.",
author = "Chiu, {C. H.} and Kuo, {H. C.} and Lee, {C. E.} and Lin, {C. H.} and Cheng, {B. S.} and Cheng, {P. C.} and Huang, {H. W.} and Lu, {T. C.} and Wang, {S. C.} and Leung, {K. M.}",
year = "2007",
doi = "10.1149/1.2783875",
language = "English (US)",
isbn = "9781566775717",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "5",
pages = "219--224",
booktitle = "ECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices",
edition = "5",
note = "47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting ; Conference date: 07-10-2007 Through 12-10-2007",
}