Study of the thin-film GaN-based LEDs with TiO2/SiO2 omnidirectional reflectors and PEC roughened surfaces

C. H. Chiu, H. C. Kuo, C. E. Lee, C. H. Lin, B. S. Cheng, P. C. Cheng, H. W. Huang, T. C. Lu, S. C. Wang, K. M. Leung

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    A novel GaN-based thin-film vertical injection light emitting diode (LED) structure with a TiO2 and SiO2 omnidirectional reflector (ODR) and an n-GaN rough surface is designed and fabricated. At a driving current of 350 mA and with chip size of 1 mm × 1 mm, the light output power and the external quantum efficiency of the LED with a TiO2/Si02 ODR reaches 330 mW and 26.7%; increasing by 18% and 16%, respectively. The optical output power mainly increased within the 120 deg cone due to the higher reflectance of the TiO2/SiO2 ODR within the blue regime.

    Original languageEnglish (US)
    Title of host publicationECS Transactions - 47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices
    Pages219-224
    Number of pages6
    Edition5
    DOIs
    StatePublished - 2007
    Event47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting - Washington, DC, United States
    Duration: Oct 7 2007Oct 12 2007

    Publication series

    NameECS Transactions
    Number5
    Volume11
    ISSN (Print)1938-5862
    ISSN (Electronic)1938-6737

    Other

    Other47th State-of-the-Art Program on Compound Semiconductors (SOTAPOCS 47) and the 8th Symposium on Wide Bandgap Semiconductor Materials and Devices - 212th ECS Meeting
    CountryUnited States
    CityWashington, DC
    Period10/7/0710/12/07

    ASJC Scopus subject areas

    • Engineering(all)

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