Submonolayer growth in the presence of defect sites

R. Vardavas, C. Ratsch, R. E. Caflisch

Research output: Contribution to journalArticlepeer-review


Submonolayer epitaxy in the presence of defect sites on the substrate is studied by means of a level-set method. Here, island nucleations occur by the creation of dimers and defect-monomer pairs. We present results for the scaled island size distribution (ISD) for growth with different densities for both random and regularly positioned defects. The dynamics show that for large D/F and defect density, all islands are nucleated at the defect sites in the very early stages of growth. We use scaling ideas to show that a gamma distribution can suitably describe the ISD.

Original languageEnglish (US)
Pages (from-to)185-192
Number of pages8
JournalSurface Science
Issue number1-3
StatePublished - Oct 1 2004


  • Epitaxy
  • Growth
  • Surface defects

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


Dive into the research topics of 'Submonolayer growth in the presence of defect sites'. Together they form a unique fingerprint.

Cite this