Abstract
Photon emission microscopy and spectral analysis of light emitted from the breakdown spots were used to study the origin of the substrate hole currents after oxide breakdown. Results showed that under positive gate bias, impact ionization of the electrons in the substrate was the dominant source of the substrate hole current and the light emission.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 537-540 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - 2000 |
| Event | 2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States Duration: Dec 10 2000 → Dec 13 2000 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry