Abstract
In this paper, we report on a comparative study of the effect of Fe 2O3 nanoparticles (NP), introduced onto a thin oxide layer formed on silicon and germanium surfaces, on the thermal decomposition pathway of the individual oxide layers. On both the surfaces, NP of Fe 2O3 undergo a reduction reaction through a bonding partner change reaction, where the oxygen atoms change from Fe to Si or Ge. On both the surfaces, annealing results in the conversion of the suboxide-like species to dioxide-like species (SiOx to SiO2 and GeO x to GeO2 respectively for Si and Ge surfaces), until the oxide layer decomposes following the desorption of the respective monoxide species (SiO and GeO). Both the Si and Ge corelevels show a larger chemical shift (4.1 and 3.51 eV in Si 2p and Ge 3d corelevels, respectively) for the as-prepared oxide samples with the NP, at room temperature compared to that without the NP (3.7 and 3.4 eV), indicating a catalytic enhancement of the dioxide formation. Selective formation of silicon oxides leads to encapsulation of the nanoparticles and acts like a protective layer, preventing the oxidation of Fe.
Original language | English (US) |
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Pages (from-to) | 191-198 |
Number of pages | 8 |
Journal | Surface Science |
Volume | 545 |
Issue number | 3 |
DOIs | |
State | Published - Nov 10 2003 |
Keywords
- Germanium
- Iron oxide
- Silicon
- Silicon oxides
- Surface chemical reaction
- X-ray photoelectron spectroscopy
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry