@inproceedings{f113b097439b40618008fdb2ebec3426,
title = "Switching probability in all-perpendicular spin valves",
abstract = "Spin-transfer devices that have perpendicularly magnetized free and polarizing layers offer the potential for reduced critical currents while still maintaining a high energy barrier U towards thermally induced magnetization reversal. A macrospin [1,2] model predicts a zero-temperature switching current Ic0 ⋉ U for perpendicularly magnetized devices. In contrast, for in-plane devices the current is increased by a term stemming from the free layer demagnetizing field caused by the free layer magnetization moving out of the plane during the switching process: Ic0 ⋉ U + μ0Mc0 2 V/4.",
author = "D. Bedau and H. Liu and M. Klein and Sun, {J. Z.} and Katine, {J. A.} and Fullerton, {E. E.} and S. Mangin and Kent, {A. D.}",
year = "2010",
doi = "10.1109/DRC.2010.5551953",
language = "English (US)",
isbn = "9781424478705",
series = "Device Research Conference - Conference Digest, DRC",
pages = "35--36",
booktitle = "68th Device Research Conference, DRC 2010",
note = "68th Device Research Conference, DRC 2010 ; Conference date: 21-06-2010 Through 23-06-2010",
}