Switching probability in all-perpendicular spin valves

D. Bedau, H. Liu, M. Klein, J. Z. Sun, J. A. Katine, E. E. Fullerton, S. Mangin, A. D. Kent

    Research output: Chapter in Book/Report/Conference proceedingConference contribution


    Spin-transfer devices that have perpendicularly magnetized free and polarizing layers offer the potential for reduced critical currents while still maintaining a high energy barrier U towards thermally induced magnetization reversal. A macrospin [1,2] model predicts a zero-temperature switching current Ic0 ⋉ U for perpendicularly magnetized devices. In contrast, for in-plane devices the current is increased by a term stemming from the free layer demagnetizing field caused by the free layer magnetization moving out of the plane during the switching process: Ic0 ⋉ U + μ0Mc0 2 V/4.

    Original languageEnglish (US)
    Title of host publication68th Device Research Conference, DRC 2010
    Number of pages2
    StatePublished - 2010
    Event68th Device Research Conference, DRC 2010 - Notre Dame, IN, United States
    Duration: Jun 21 2010Jun 23 2010

    Publication series

    NameDevice Research Conference - Conference Digest, DRC
    ISSN (Print)1548-3770


    Other68th Device Research Conference, DRC 2010
    Country/TerritoryUnited States
    CityNotre Dame, IN

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering


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