Tailoring the optical properties of boron doped μc-Si: H thin films by changing the SiH4/H2 ratio using RF-PECVD process

Ghada Dushaq, Ammar Nayfeh, Mahmoud Rasras

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper depicts the effect of SiH4/H2 dilution ratio (R) on the structural and optical properties of amorphous silicon matrix with embedded microcrystals of silicon. The thin films are prepared using standard RF-PECVD process at substrate temperature of 250 ° C.

Original languageEnglish (US)
Title of host publicationFrontiers in Optics, FiO 2016
PublisherOSA - The Optical Society
ISBN (Print)9781943580194
DOIs
StatePublished - Jul 21 2014
EventFrontiers in Optics, FiO 2016 - Rochester, United States
Duration: Oct 17 2016Oct 21 2016

Publication series

NameOptics InfoBase Conference Papers

Other

OtherFrontiers in Optics, FiO 2016
CountryUnited States
CityRochester
Period10/17/1610/21/16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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