Temperature dependence of the switching field in all-perpendicular spin-valve nanopillars

D. B. Gopman; D. Bedau; G. Wolf; S. Mangin; E. E. Fullerton; J. A. Katine; A. D. Kent

doi:10.1103/PhysRevB.88.100401

Temperature dependence of the switching field in all-perpendicular spin-valve nanopillars

D. B. Gopman, D. Bedau, G. Wolf, S. Mangin, E. E. Fullerton, J. A. Katine, A. D. Kent

Research output: Contribution to journal › Article › peer-review

Abstract

We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75-nm-diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (i.e. the mean switching field and the variance of the switching field distribution) from 20 up to 400 K are in disagreement with a Néel-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified Néel-Brown model that fits the experimental data in which we attribute a T3^/2 dependence to the barrier height and the anisotropy field due to the temperature dependent magnetization and anisotropy energy.

Original language	English (US)
Article number	100401
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	88
Issue number	10
DOIs	https://doi.org/10.1103/PhysRevB.88.100401
State	Published - Sep 3 2013

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.88.100401

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title = "Temperature dependence of the switching field in all-perpendicular spin-valve nanopillars",

abstract = "We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75-nm-diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (i.e. the mean switching field and the variance of the switching field distribution) from 20 up to 400 K are in disagreement with a N{\'e}el-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified N{\'e}el-Brown model that fits the experimental data in which we attribute a T3/2 dependence to the barrier height and the anisotropy field due to the temperature dependent magnetization and anisotropy energy.",

author = "Gopman, {D. B.} and D. Bedau and G. Wolf and S. Mangin and Fullerton, {E. E.} and Katine, {J. A.} and Kent, {A. D.}",

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T1 - Temperature dependence of the switching field in all-perpendicular spin-valve nanopillars

AU - Gopman, D. B.

AU - Bedau, D.

AU - Wolf, G.

AU - Mangin, S.

AU - Fullerton, E. E.

AU - Katine, J. A.

AU - Kent, A. D.

PY - 2013/9/3

Y1 - 2013/9/3

N2 - We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75-nm-diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (i.e. the mean switching field and the variance of the switching field distribution) from 20 up to 400 K are in disagreement with a Néel-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified Néel-Brown model that fits the experimental data in which we attribute a T3/2 dependence to the barrier height and the anisotropy field due to the temperature dependent magnetization and anisotropy energy.

AB - We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75-nm-diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (i.e. the mean switching field and the variance of the switching field distribution) from 20 up to 400 K are in disagreement with a Néel-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified Néel-Brown model that fits the experimental data in which we attribute a T3/2 dependence to the barrier height and the anisotropy field due to the temperature dependent magnetization and anisotropy energy.

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Temperature dependence of the switching field in all-perpendicular spin-valve nanopillars

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