Temperature Profile Measurement and Failure Characterization of ESD Protection Devices Using Spectroscopic Photon Emission Microscopy and Raman Spectroscopy

Mahmoud Rasras, Ingrid De Wolf, Guido Groeseneken, Jian Chen, Karlheinz Bock, Herman E. Maes

Research output: Contribution to conferencePaperpeer-review

Abstract

In this paper, Photon Emission Microscopy (PEM) and micro-Raman Spectroscopy (μRS) are applied for temperature profile measurements and failure characterization in gg-nMOS BSD protection devices. The measurements were carried out in avalanche and snapback biasing conditions. A correlation between the temperature profile obtained by μRS and the light emission location, measured by PEM, is observed for non-degraded devices. In addition, ESD-degraded devices were studied. PEM, μRS, Spectroscopic Photon Emission Microscopy (SPEM) and electrical measurements were used to investigate the origin of the light emitted at the failure site. They showed that the light emission occurring at the failure site is due to impact ionization.

Original languageEnglish (US)
Pages69-76
Number of pages8
StatePublished - 1999
EventProceedings of the 25th International Symposium for Testing and Failure Analysis - Santa Clara, CA, United States
Duration: Nov 14 1999Nov 18 1999

Other

OtherProceedings of the 25th International Symposium for Testing and Failure Analysis
CountryUnited States
CitySanta Clara, CA
Period11/14/9911/18/99

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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