Abstract
Emerging nonvolatile multilevel memory devices have been regarded as a promising solution to meet the increasing demand of high-density memory with low-power consumption. In particular, decimal system of the new computers instead of binary system could be developed if ten nonvolatile states are realized. Here, a general remanent magnetism engineering method is proposed for realizing multiple reliable magnetic and resistance states, not depending on a specific material or device structure. Especially, as a proof-of-concept demonstration, ten states of nonvolatile memory based on the manipulation of ferromagnetic remanent magnetization have been revealed in both Co/Pt magnetic multilayers with strong perpendicular magnetic anisotropy and MgO-based magnetic tunneling junctions at room temperature. Considering ferromagnets have been one of the key factors that enabled the information revolution from its inception, this state-of-the-art remanent magnetism engineering approach has a very broad application prospect in the field of spintronics.
Original language | English (US) |
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Article number | 1806460 |
Journal | Advanced Functional Materials |
Volume | 29 |
Issue number | 2 |
DOIs | |
State | Published - Jan 10 2019 |
Keywords
- magnetic tunneling junctions
- magnetoresistance
- multilevel states
- nonvolatile memory
- remanent magnetization
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- General Chemistry
- General Materials Science
- Electrochemistry
- Biomaterials