The challenges in guided self-assembly of Ge and InAs quantum dots on Si

Z. M. Zhao, T. S. Yoon, W. Feng, B. Y. Li, J. H. Kim, J. Liu, O. Hulko, Y. H. Xie, H. M. Kim, K. B. Kim, H. J. Kim, K. L. Wang, C. Ratsch, R. Caflisch, D. Y. Ryu, T. P. Russell

Research output: Contribution to journalArticle

Abstract

The topic of guided self-assembly of Ge and InAs quantum dots on Si (001) substrates via epitaxy is discussed. A buried misfit dislocation network can be used to guide the assembly process through the associated strain field. Patterned substrates can also be used to guide the assembly process. This paper discusses the recent experimental and theoretical studies of the guided assembly process with an emphasis on what remains to be understood.

Original languageEnglish (US)
Pages (from-to)195-199
Number of pages5
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
StatePublished - Jun 5 2006

Keywords

  • Ge
  • InAs
  • Quantum dots
  • Self-assembly

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Zhao, Z. M., Yoon, T. S., Feng, W., Li, B. Y., Kim, J. H., Liu, J., Hulko, O., Xie, Y. H., Kim, H. M., Kim, K. B., Kim, H. J., Wang, K. L., Ratsch, C., Caflisch, R., Ryu, D. Y., & Russell, T. P. (2006). The challenges in guided self-assembly of Ge and InAs quantum dots on Si. Thin Solid Films, 508(1-2), 195-199. https://doi.org/10.1016/j.tsf.2005.08.407