The challenges in guided self-assembly of Ge and InAs quantum dots on Si

Z. M. Zhao; T. S. Yoon; W. Feng; B. Y. Li; J. H. Kim; J. Liu; O. Hulko; Y. H. Xie; H. M. Kim; K. B. Kim; H. J. Kim; K. L. Wang; C. Ratsch; R. Caflisch; D. Y. Ryu; T. P. Russell

doi:10.1016/j.tsf.2005.08.407

The challenges in guided self-assembly of Ge and InAs quantum dots on Si

Z. M. Zhao, T. S. Yoon, W. Feng, B. Y. Li, J. H. Kim, J. Liu, O. Hulko, Y. H. Xie, H. M. Kim, K. B. Kim, H. J. Kim, K. L. Wang, C. Ratsch, R. Caflisch, D. Y. Ryu, T. P. Russell

Mathematics

Research output: Contribution to journal › Article › peer-review

Abstract

The topic of guided self-assembly of Ge and InAs quantum dots on Si (001) substrates via epitaxy is discussed. A buried misfit dislocation network can be used to guide the assembly process through the associated strain field. Patterned substrates can also be used to guide the assembly process. This paper discusses the recent experimental and theoretical studies of the guided assembly process with an emphasis on what remains to be understood.

Original language	English (US)
Pages (from-to)	195-199
Number of pages	5
Journal	Thin Solid Films
Volume	508
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2005.08.407
State	Published - Jun 5 2006

Keywords

Ge
InAs
Quantum dots
Self-assembly

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.08.407

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title = "The challenges in guided self-assembly of Ge and InAs quantum dots on Si",

abstract = "The topic of guided self-assembly of Ge and InAs quantum dots on Si (001) substrates via epitaxy is discussed. A buried misfit dislocation network can be used to guide the assembly process through the associated strain field. Patterned substrates can also be used to guide the assembly process. This paper discusses the recent experimental and theoretical studies of the guided assembly process with an emphasis on what remains to be understood.",

keywords = "Ge, InAs, Quantum dots, Self-assembly",

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AU - Zhao, Z. M.

AU - Yoon, T. S.

AU - Feng, W.

AU - Li, B. Y.

AU - Kim, J. H.

AU - Liu, J.

AU - Hulko, O.

AU - Xie, Y. H.

AU - Kim, H. M.

AU - Kim, K. B.

AU - Kim, H. J.

AU - Wang, K. L.

AU - Ratsch, C.

AU - Caflisch, R.

AU - Ryu, D. Y.

AU - Russell, T. P.

PY - 2006/6/5

Y1 - 2006/6/5

N2 - The topic of guided self-assembly of Ge and InAs quantum dots on Si (001) substrates via epitaxy is discussed. A buried misfit dislocation network can be used to guide the assembly process through the associated strain field. Patterned substrates can also be used to guide the assembly process. This paper discusses the recent experimental and theoretical studies of the guided assembly process with an emphasis on what remains to be understood.

AB - The topic of guided self-assembly of Ge and InAs quantum dots on Si (001) substrates via epitaxy is discussed. A buried misfit dislocation network can be used to guide the assembly process through the associated strain field. Patterned substrates can also be used to guide the assembly process. This paper discusses the recent experimental and theoretical studies of the guided assembly process with an emphasis on what remains to be understood.

KW - Ge

KW - InAs

KW - Quantum dots

KW - Self-assembly

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The challenges in guided self-assembly of Ge and InAs quantum dots on Si

Abstract

Keywords

ASJC Scopus subject areas

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