@inproceedings{6bc7237fe24444d9aad2335c0a7b301d,
title = "The level-set method for modeling epitaxial growth",
abstract = "A level-set model for the simulation of epitaxial growth is described. In this model, the motion of island boundaries of discrete atomic layers is determined by the time evolution of a continuous level-set function φ. The adatom concentration is treated in a mean field manner. Thus, fast events (such as diffusion or detachment of adatoms from island boundaries) can be described without extra computational cost. We discuss results for the scaled island size distributions in the submonolayer aggregation regime and compare them to those obtained from atomistic KMC simulations and experiments. The level-set method can naturally be extended to describe multilayer growth. Roughening and coarsening of the surface will be discussed.",
keywords = "Aggregation Phenomena, Epitaxial Growth, Level-Set",
author = "C. Ratsch and M. Petersen and Caflisch, {R. E.}",
note = "Copyright: Copyright 2012 Elsevier B.V., All rights reserved.; 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 ; Conference date: 21-04-2002 Through 25-04-2002",
year = "2002",
language = "English (US)",
isbn = "0970827571",
series = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002",
pages = "418--421",
editor = "M. Laudon and B. Romanowicz",
booktitle = "2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002",
}