The level-set method for modeling epitaxial growth

C. Ratsch, M. Petersen, R. E. Caflisch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A level-set model for the simulation of epitaxial growth is described. In this model, the motion of island boundaries of discrete atomic layers is determined by the time evolution of a continuous level-set function φ. The adatom concentration is treated in a mean field manner. Thus, fast events (such as diffusion or detachment of adatoms from island boundaries) can be described without extra computational cost. We discuss results for the scaled island size distributions in the submonolayer aggregation regime and compare them to those obtained from atomistic KMC simulations and experiments. The level-set method can naturally be extended to describe multilayer growth. Roughening and coarsening of the surface will be discussed.

Original languageEnglish (US)
Title of host publication2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
EditorsM. Laudon, B. Romanowicz
Pages418-421
Number of pages4
StatePublished - 2002
Event2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 - San Juan, Puerto Rico
Duration: Apr 21 2002Apr 25 2002

Publication series

Name2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002

Other

Other2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002
CountryPuerto Rico
CitySan Juan
Period4/21/024/25/02

Keywords

  • Aggregation Phenomena
  • Epitaxial Growth
  • Level-Set

ASJC Scopus subject areas

  • Engineering(all)

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    Ratsch, C., Petersen, M., & Caflisch, R. E. (2002). The level-set method for modeling epitaxial growth. In M. Laudon, & B. Romanowicz (Eds.), 2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002 (pp. 418-421). (2002 International Conference on Modeling and Simulation of Microsystems - MSM 2002).