The thermoelectric power of MEM(TCNQ)2

R. C. Lacoe; G. Grüner; P. M. Chaikin

doi:10.1016/0038-1098(80)90095-2

The thermoelectric power of MEM(TCNQ)₂

R. C. Lacoe, G. Grüner, P. M. Chaikin

Research output: Contribution to journal › Article › peer-review

Abstract

MEM(TCNQ)₂ undergoes a first order semiconductor to metal transition at 340.8 K. We have measured the thermoelectric power (TEP) of MEM(TCNQ)₂ in the temperature range above 335 K. Above the transition the TEP is −65 μV/°K, in the low temperature phase it is strongly temperature dependent and approaches zero near the transition. The indicated loss of spin entropy at the transition is discussed.

Original language	English (US)
Pages (from-to)	599-601
Number of pages	3
Journal	Solid State Communications
Volume	36
Issue number	7
DOIs	https://doi.org/10.1016/0038-1098(80)90095-2
State	Published - 1980

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(80)90095-2

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@article{d1ea964bdc2942b9ae40a4f2951890ac,

title = "The thermoelectric power of MEM(TCNQ)2",

abstract = "MEM(TCNQ)2 undergoes a first order semiconductor to metal transition at 340.8 K. We have measured the thermoelectric power (TEP) of MEM(TCNQ)2 in the temperature range above 335 K. Above the transition the TEP is −65 μV/°K, in the low temperature phase it is strongly temperature dependent and approaches zero near the transition. The indicated loss of spin entropy at the transition is discussed.",

author = "Lacoe, {R. C.} and G. Gr{\"u}ner and Chaikin, {P. M.}",

note = "Funding Information: Acknowledgments - The authors wish to acknowl— edge T. Holstein for providing useful discus— sions and C. A. Sawatzky for providing the samples and useful discussions. Research sup— ported by NSF under grant No. DMR—76—83421. One of us (P.M.C.) acknowledges the A. P. Sloan Foundation for a fellowship.",

year = "1980",

doi = "10.1016/0038-1098(80)90095-2",

language = "English (US)",

volume = "36",

pages = "599--601",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "7",

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TY - JOUR

T1 - The thermoelectric power of MEM(TCNQ)2

AU - Lacoe, R. C.

AU - Grüner, G.

AU - Chaikin, P. M.

N1 - Funding Information: Acknowledgments - The authors wish to acknowl— edge T. Holstein for providing useful discus— sions and C. A. Sawatzky for providing the samples and useful discussions. Research sup— ported by NSF under grant No. DMR—76—83421. One of us (P.M.C.) acknowledges the A. P. Sloan Foundation for a fellowship.

PY - 1980

Y1 - 1980

N2 - MEM(TCNQ)2 undergoes a first order semiconductor to metal transition at 340.8 K. We have measured the thermoelectric power (TEP) of MEM(TCNQ)2 in the temperature range above 335 K. Above the transition the TEP is −65 μV/°K, in the low temperature phase it is strongly temperature dependent and approaches zero near the transition. The indicated loss of spin entropy at the transition is discussed.

AB - MEM(TCNQ)2 undergoes a first order semiconductor to metal transition at 340.8 K. We have measured the thermoelectric power (TEP) of MEM(TCNQ)2 in the temperature range above 335 K. Above the transition the TEP is −65 μV/°K, in the low temperature phase it is strongly temperature dependent and approaches zero near the transition. The indicated loss of spin entropy at the transition is discussed.

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U2 - 10.1016/0038-1098(80)90095-2

DO - 10.1016/0038-1098(80)90095-2

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AN - SCOPUS:0019084428

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VL - 36

SP - 599

EP - 601

JO - Solid State Communications

JF - Solid State Communications

IS - 7

ER -

The thermoelectric power of MEM(TCNQ)₂

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