The thermoelectric power of MEM(TCNQ)2

R. C. Lacoe, G. Grüner, P. M. Chaikin

Research output: Contribution to journalArticle

Abstract

MEM(TCNQ)2 undergoes a first order semiconductor to metal transition at 340.8 K. We have measured the thermoelectric power (TEP) of MEM(TCNQ)2 in the temperature range above 335 K. Above the transition the TEP is −65 μV/°K, in the low temperature phase it is strongly temperature dependent and approaches zero near the transition. The indicated loss of spin entropy at the transition is discussed.

Original languageEnglish (US)
Pages (from-to)599-601
Number of pages3
JournalSolid State Communications
Volume36
Issue number7
DOIs
StatePublished - Jan 1 1980
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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    Lacoe, R. C., Grüner, G., & Chaikin, P. M. (1980). The thermoelectric power of MEM(TCNQ)2. Solid State Communications, 36(7), 599-601. https://doi.org/10.1016/0038-1098(80)90095-2