Thermopower of doped and damaged NbSe3

P. M. Chaikin, W. W. Fuller, R. Lacoe, J. F. Kwak, R. L. Greene, J. C. Eckert, N. P. Ong

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We have measured the thermoelectric power of pure NbSe3 as well as samples which have been substitutionally doped with isoelectronic Ta and the charged impurity Ti and separate samples which have been radiation damaged by 2.5 MeV protons. We find that 5% Ta doping supresses the lower temperature charge density wave transition. In contrast, the radiation damaged samples and 0.1% Ti samples with larger residual resistivities then the Ta doped samples retain the CDW transitions. A discussion is given of the difference between doping and radiation damage.

    Original languageEnglish (US)
    Pages (from-to)553-557
    Number of pages5
    JournalSolid State Communications
    Volume39
    Issue number4
    DOIs
    StatePublished - Jul 1981

    ASJC Scopus subject areas

    • Chemistry(all)
    • Condensed Matter Physics
    • Materials Chemistry

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