@inproceedings{74527a98b95a4516afabe24be0ccf1fb,
title = "Thin film GaAs photodetector integrated on silicon using ultra-thin ge buffer layer for visible photonics applications",
abstract = "GaAs metal-semiconductor-metal photodetector epitaxially grown on Si is demonstrated. The growth of GaAs is carried out using low temperature ultra-thin Ge interlayers. Results show a remarkable photoresponsivity value of (0.54 ± 0.15) A/W at 5 V reverse bias, and 850 nm.",
author = "Ghada Dushaq and Mahmoud Rasras",
note = "Publisher Copyright: {\textcopyright} OSA 2020 {\textcopyright} 2020 The Author(s); 2020 Frontiers in Optics Conference, FiO 2020 ; Conference date: 14-09-2020 Through 17-09-2020",
year = "2020",
month = sep,
day = "14",
doi = "10.1364/FIO.2020.FTu2E.5",
language = "English (US)",
series = "Optics InfoBase Conference Papers",
publisher = "The Optical Society",
booktitle = "Frontiers in Optics - Proceedings Frontiers in Optics / Laser Science, Part of Frontiers in Optics + Laser Science APS/DLS, FiO 2020",
address = "United States",
}