Thin film GaAs photodetector integrated on silicon using ultra-thin ge buffer layer for visible photonics applications

Ghada Dushaq, Mahmoud Rasras

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

GaAs metal-semiconductor-metal photodetector epitaxially grown on Si is demonstrated. The growth of GaAs is carried out using low temperature ultra-thin Ge interlayers. Results show a remarkable photoresponsivity value of (0.54 ± 0.15) A/W at 5 V reverse bias, and 850 nm.

Original languageEnglish (US)
Title of host publicationFrontiers in Optics - Proceedings Frontiers in Optics / Laser Science, Part of Frontiers in Optics + Laser Science APS/DLS, FiO 2020
PublisherOptica Publishing Group (formerly OSA)
ISBN (Electronic)9781943580804
DOIs
StatePublished - Sep 14 2020
Event2020 Frontiers in Optics Conference, FiO 2020 - Washington, United States
Duration: Sep 14 2020Sep 17 2020

Publication series

NameOptics InfoBase Conference Papers

Conference

Conference2020 Frontiers in Optics Conference, FiO 2020
Country/TerritoryUnited States
CityWashington
Period9/14/209/17/20

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

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