TY - GEN
T1 - Thin film GaAs photodetector integrated on silicon using ultra-thin ge buffer layer for visible photonics applications
AU - Dushaq, Ghada
AU - Rasras, Mahmoud
N1 - Publisher Copyright:
© OSA 2020 © 2020 The Author(s)
PY - 2020/9/14
Y1 - 2020/9/14
N2 - GaAs metal-semiconductor-metal photodetector epitaxially grown on Si is demonstrated. The growth of GaAs is carried out using low temperature ultra-thin Ge interlayers. Results show a remarkable photoresponsivity value of (0.54 ± 0.15) A/W at 5 V reverse bias, and 850 nm.
AB - GaAs metal-semiconductor-metal photodetector epitaxially grown on Si is demonstrated. The growth of GaAs is carried out using low temperature ultra-thin Ge interlayers. Results show a remarkable photoresponsivity value of (0.54 ± 0.15) A/W at 5 V reverse bias, and 850 nm.
UR - http://www.scopus.com/inward/record.url?scp=85106066122&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85106066122&partnerID=8YFLogxK
U2 - 10.1364/FIO.2020.FTu2E.5
DO - 10.1364/FIO.2020.FTu2E.5
M3 - Conference contribution
AN - SCOPUS:85106066122
T3 - Optics InfoBase Conference Papers
BT - Frontiers in Optics - Proceedings Frontiers in Optics / Laser Science, Part of Frontiers in Optics + Laser Science APS/DLS, FiO 2020
PB - Optica Publishing Group (formerly OSA)
T2 - 2020 Frontiers in Optics Conference, FiO 2020
Y2 - 14 September 2020 through 17 September 2020
ER -