Polycrystalline germanium based Thin-film tunnelling transistors were fabricated on flexible plastic substrates using stress-assissted lateral crystallization germanium. It was observed that tunnelling phenomenon occurred through the potential barrier in a channel where the two frontiers of lateral growth initiated from drain. It was also found that the potential barrier of the transistors was controlled by gate bias. The results show that on/off ratio of the transistors is 104 and high driving current is 2 mA.
|Original language||English (US)|
|Number of pages||3|
|Journal||Applied Physics Letters|
|State||Published - Aug 9 2004|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)