Thin-film tunneling transistors on flexible plastic substrates based on stress-assisted lateral growth of polycrystalline germanium

Polycrystalline germanium based Thin-film tunnelling transistors were fabricated on flexible plastic substrates using stress-assissted lateral crystallization germanium. It was observed that tunnelling phenomenon occurred through the potential barrier in a channel where the two frontiers of lateral growth initiated from drain. It was also found that the potential barrier of the transistors was controlled by gate bias. The results show that on/off ratio of the transistors is 10⁴ and high driving current is 2 mA.