Abstract
DC reactive sputter deposition of dielectric films can be greatly affected by arcing. Observations have indicated that arcing is due to breakdown of the dielectric (oxide) film, which grows on the surface of the metal target as a result of positive charge accumulation. The use of pulsed-DC power in the pulsing frequency range of 20-350 kHz has been employed to reduce or eliminate arcing. Using duty cycles, which could be varied between 50% and 90%, plasma dynamics were studied. The relationships between various deposition process parameters (power, pressure, pulsing frequency, duty cycle, etc.) were studied using time-resolved general electrical, Langmuir probe and optical emission measurement techniques and the results are discussed.
Original language | English (US) |
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Title of host publication | IEEE International Conference on Plasma Science |
Pages | 264 |
Number of pages | 1 |
State | Published - 2002 |
Event | 2002 IEEE International Conference on plasma Science - Banff, Alta., Canada Duration: May 26 2002 → May 30 2002 |
Other
Other | 2002 IEEE International Conference on plasma Science |
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Country/Territory | Canada |
City | Banff, Alta. |
Period | 5/26/02 → 5/30/02 |
ASJC Scopus subject areas
- Condensed Matter Physics