Top-gated Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain

Junghyo Nah, E. S. Liu, K. M. Varahramyan, D. Shahrjerdi, S. K. Banerjee, E. Tutuc

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Semiconductor (e.g. silicon, germanium) nanowires have gained interest as an attractive platform to fabricate field effect transistors devices because of their reduced short channel effects by comparison to planar devices [1]. The realization of high performance nanowire devices however has been stymied primarily by large source (S) and drain (D) contact resistances. Here we report the fabrication and electrical characterization of the top-gated Ge-Si xGe1-x core-shell nanowire field-effect transistors (NWFETs) with highly doped S/D. The highly doped S/D, realized using low energy ion implantation, allows an efficient carrier injection into the NWFET channel.

Original languageEnglish (US)
Title of host publication67th Device Research Conference, DRC 2009
Pages15-16
Number of pages2
DOIs
StatePublished - Dec 11 2009
Event67th Device Research Conference, DRC 2009 - University Park, PA, United States
Duration: Jun 22 2009Jun 24 2009

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other67th Device Research Conference, DRC 2009
CountryUnited States
CityUniversity Park, PA
Period6/22/096/24/09

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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