Top-gated Ge-SixGe1-x core-shell nanowire field-effect transistors with highly doped source and drain

Junghyo Nah; E. S. Liu; K. M. Varahramyan; D. Shahrjerdi; S. K. Banerjee; E. Tutuc

doi:10.1109/DRC.2009.5354970

Top-gated Ge-Si_xGe_1-x core-shell nanowire field-effect transistors with highly doped source and drain

Junghyo Nah, E. S. Liu, K. M. Varahramyan, D. Shahrjerdi, S. K. Banerjee, E. Tutuc

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Semiconductor (e.g. silicon, germanium) nanowires have gained interest as an attractive platform to fabricate field effect transistors devices because of their reduced short channel effects by comparison to planar devices [1]. The realization of high performance nanowire devices however has been stymied primarily by large source (S) and drain (D) contact resistances. Here we report the fabrication and electrical characterization of the top-gated Ge-Si _xGe_1-x core-shell nanowire field-effect transistors (NWFETs) with highly doped S/D. The highly doped S/D, realized using low energy ion implantation, allows an efficient carrier injection into the NWFET channel.

Original language	English (US)
Title of host publication	67th Device Research Conference, DRC 2009
Pages	15-16
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2009.5354970
State	Published - Dec 11 2009
Event	67th Device Research Conference, DRC 2009 - University Park, PA, United States Duration: Jun 22 2009 → Jun 24 2009

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	67th Device Research Conference, DRC 2009
Country/Territory	United States
City	University Park, PA
Period	6/22/09 → 6/24/09

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2009.5354970

Cite this

Nah, J, Liu, ES, Varahramyan, KM, Shahrjerdi, D, Banerjee, SK & Tutuc, E 2009, Top-gated Ge-Si_xGe_1-x core-shell nanowire field-effect transistors with highly doped source and drain. in 67th Device Research Conference, DRC 2009., 5354970, Device Research Conference - Conference Digest, DRC, pp. 15-16, 67th Device Research Conference, DRC 2009, University Park, PA, United States, 6/22/09. https://doi.org/10.1109/DRC.2009.5354970

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abstract = "Semiconductor (e.g. silicon, germanium) nanowires have gained interest as an attractive platform to fabricate field effect transistors devices because of their reduced short channel effects by comparison to planar devices [1]. The realization of high performance nanowire devices however has been stymied primarily by large source (S) and drain (D) contact resistances. Here we report the fabrication and electrical characterization of the top-gated Ge-Si xGe1-x core-shell nanowire field-effect transistors (NWFETs) with highly doped S/D. The highly doped S/D, realized using low energy ion implantation, allows an efficient carrier injection into the NWFET channel.",

author = "Junghyo Nah and Liu, {E. S.} and Varahramyan, {K. M.} and D. Shahrjerdi and Banerjee, {S. K.} and E. Tutuc",

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AU - Nah, Junghyo

AU - Liu, E. S.

AU - Varahramyan, K. M.

AU - Shahrjerdi, D.

AU - Banerjee, S. K.

AU - Tutuc, E.

PY - 2009/12/11

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AB - Semiconductor (e.g. silicon, germanium) nanowires have gained interest as an attractive platform to fabricate field effect transistors devices because of their reduced short channel effects by comparison to planar devices [1]. The realization of high performance nanowire devices however has been stymied primarily by large source (S) and drain (D) contact resistances. Here we report the fabrication and electrical characterization of the top-gated Ge-Si xGe1-x core-shell nanowire field-effect transistors (NWFETs) with highly doped S/D. The highly doped S/D, realized using low energy ion implantation, allows an efficient carrier injection into the NWFET channel.

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