Topological disorder and conductance fluctuations in granular thin films

Kristin M. Abkemeier, David G. Grier

    Research output: Contribution to journalConference articlepeer-review

    Abstract

    Topological disorder places constraints on the local flow of currents in granular thin films of metals and semiconductors. These constraints in turn influence measurable transport properties such as conductance and conductance fluctuations for these films. This paper quantifies disorder in the disposition of grains within real and simulated thin films by applying methods originally developed studying foam evolution. For simulated Voronoi resistor networks, the overall conductance of a film with a given grain density achieves a minimum value for an intermediate degree disorder. Films of equal of conductances on either side of this minimum can have strikingly different current distributions. The results of simulations of 1/f noise systems in the context of transport and scanning probe microscopy measurement of a-Si:H thin films are discussed.

    Original languageEnglish (US)
    Pages (from-to)271-274
    Number of pages4
    JournalMaterials Research Society Symposium - Proceedings
    Volume407
    StatePublished - 1996
    EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
    Duration: Nov 27 1995Nov 30 1995

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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