Transport Evidence for Sulfur Vacancies as the Origin of Unintentional n-Type Doping in Pyrite FeS ₂

Material Science

• Activation Energy 33%
• Carrier Concentration 33%
• Density 66%
• Electrical Resistivity 66%
• Electronic Circuit 33%
• Photovoltaics 100%
• Single Crystal 33%
• Solar Cell 33%
• Sulfur Vacancies 100%
• Thin Films 66%
• Transition Metal 66%

Keyphrases

• Chemical Vapor Transport 33%
• Deep Donor 33%
• Donor Density 66%
• Electronic Transport Measurements 33%
• Impurity Analysis 33%
• Low-cost Photovoltaics 33%
• Native Defects 33%
• Positive Temperature Coefficient of Resistivity 33%
• Vacancy Concentration 33%