Tunable magnetic and electrical properties of polycrystalline and epitaxial NixFe3-xO4 thin films prepared by reactive co-sputtering

C. Jin, Q. Zhang, W. B. Mi, E. Y. Jiang, H. L. Bai

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Polycrystalline and epitaxial NixFe3-xO4 (0 ≤ x ≤ 1.03) thin films were fabricated by reactively co-sputtering Fe and Ni targets in a mixed Ar + O2 atmosphere, and the structure, magnetic and magnetotransport properties were investigated systematically. The saturation magnetization and resistivity can be tuned over a wide range. The room-temperature saturation magnetization for the polycrystalline thin films decreases linearly with x from 440 to 230 emu cm-3, due to Ni substitution. For the epitaxial thin films, the saturation magnetization and the resistivity can be tuned in the range 195-340 emu cm-3 and 10 -4-10-2 Ω m by Ni substitution and the introduction of Fe vacancies, because both Ni substitution and Fe vacancies can influence the charge carrier density and the double exchange on the B sublattice.

Original languageEnglish (US)
Article number385001
JournalJournal of Physics D: Applied Physics
Issue number38
StatePublished - Sep 29 2010

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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