Tuning the optical properties of RF-PECVD grown μc-Si:H thin films using different hydrogen flow rate

Ghada Dushaq, Ammar Nayfeh, Mahmoud Rasras

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper we study the effect of H2/SiH4 dilution ratio (R) on the structural and optical properties of hydrogenated microcrystalline silicon embedded in amorphous matrix thin films. The thin films are prepared using standard RF-PECVD process at substrate temperature of 200 °C. The effect of hydrogen dilution ratio on the optical index of refraction and the absorption coefficient were investigated. It was observed that by incorporating higher hydrogen flow rate in the films with low SiH4 concentration, the optical index of refraction can be tuned over a broad range of wavelengths due to the variation of crystalline properties of the produced films. By varying the hydrogen flow of μc-Si:H samples, ∼8% and 12% reduction in the index of refraction at 400 nm and at 1500 nm can be achieved, respectively. In addition a 78% reduction in surface roughness is obtained when 60sccm of H2 is used in the deposition compared to the sample without any H2 incorporation.

Original languageEnglish (US)
Pages (from-to)172-177
Number of pages6
JournalSuperlattices and Microstructures
Volume107
DOIs
StatePublished - Jul 1 2017

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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