Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of Germanium

B. Hekmatshoar; S. Mohajerzadeh; D. Shahrjerdi; M. D. Robertson

doi:10.1109/DRC.2004.1367796

Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of Germanium

B. Hekmatshoar, S. Mohajerzadeh, D. Shahrjerdi, M. D. Robertson

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The tunneling and depletion-mode of poly-Ge thin film transistors (TFT), fabricated by low-temperature as low as 150°C and 200°C respectively, along with stress-assisted Cu-induced lateral growth and metal-free crystallization, were analyzed. Mechanical compressive stress was applied during annealing by bending the flexible polyethylene (PET) substrates inward. The depletionn-mode TFTs were fabricated based on metal-free crystallization of Ge by hydrogenation and annealing. The results show the scanning electron microscopy (SEM) surface morphology of the Ge layer after a series of hydrogenation and annealing steps in a 150 Watt RF hydrogen plasma at 2000°C using a plasma enhanced chemical vapor deposition (PECVD) machine.

Original language	English (US)
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	87-88
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2004.1367796
State	Published - 2004
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: Jun 21 2004 → Jun 23 2004

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	Device Research Conference - Conference Digest, 62nd DRC
Country/Territory	United States
City	Notre Dame, IN
Period	6/21/04 → 6/23/04

ASJC Scopus subject areas

General Engineering

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10.1109/DRC.2004.1367796

Cite this

Hekmatshoar, B., Mohajerzadeh, S., Shahrjerdi, D., & Robertson, M. D. (2004). Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of Germanium. In Device Research Conference - Conference Digest, 62nd DRC (pp. 87-88). Article III.-18 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2004.1367796

Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of Germanium. / Hekmatshoar, B.; Mohajerzadeh, S.; Shahrjerdi, D. et al.
Device Research Conference - Conference Digest, 62nd DRC. 2004. p. 87-88 III.-18 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hekmatshoar, B, Mohajerzadeh, S, Shahrjerdi, D & Robertson, MD 2004, Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of Germanium. in Device Research Conference - Conference Digest, 62nd DRC., III.-18, Device Research Conference - Conference Digest, DRC, pp. 87-88, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, 6/21/04. https://doi.org/10.1109/DRC.2004.1367796

Hekmatshoar B, Mohajerzadeh S, Shahrjerdi D, Robertson MD. Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of Germanium. In Device Research Conference - Conference Digest, 62nd DRC. 2004. p. 87-88. III.-18. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC.2004.1367796

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title = "Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of Germanium",

abstract = "The tunneling and depletion-mode of poly-Ge thin film transistors (TFT), fabricated by low-temperature as low as 150°C and 200°C respectively, along with stress-assisted Cu-induced lateral growth and metal-free crystallization, were analyzed. Mechanical compressive stress was applied during annealing by bending the flexible polyethylene (PET) substrates inward. The depletionn-mode TFTs were fabricated based on metal-free crystallization of Ge by hydrogenation and annealing. The results show the scanning electron microscopy (SEM) surface morphology of the Ge layer after a series of hydrogenation and annealing steps in a 150 Watt RF hydrogen plasma at 2000°C using a plasma enhanced chemical vapor deposition (PECVD) machine.",

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AU - Hekmatshoar, B.

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AU - Shahrjerdi, D.

AU - Robertson, M. D.

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N2 - The tunneling and depletion-mode of poly-Ge thin film transistors (TFT), fabricated by low-temperature as low as 150°C and 200°C respectively, along with stress-assisted Cu-induced lateral growth and metal-free crystallization, were analyzed. Mechanical compressive stress was applied during annealing by bending the flexible polyethylene (PET) substrates inward. The depletionn-mode TFTs were fabricated based on metal-free crystallization of Ge by hydrogenation and annealing. The results show the scanning electron microscopy (SEM) surface morphology of the Ge layer after a series of hydrogenation and annealing steps in a 150 Watt RF hydrogen plasma at 2000°C using a plasma enhanced chemical vapor deposition (PECVD) machine.

AB - The tunneling and depletion-mode of poly-Ge thin film transistors (TFT), fabricated by low-temperature as low as 150°C and 200°C respectively, along with stress-assisted Cu-induced lateral growth and metal-free crystallization, were analyzed. Mechanical compressive stress was applied during annealing by bending the flexible polyethylene (PET) substrates inward. The depletionn-mode TFTs were fabricated based on metal-free crystallization of Ge by hydrogenation and annealing. The results show the scanning electron microscopy (SEM) surface morphology of the Ge layer after a series of hydrogenation and annealing steps in a 150 Watt RF hydrogen plasma at 2000°C using a plasma enhanced chemical vapor deposition (PECVD) machine.

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Tunneling and depletion-mode TFTs fabricated by low-temperature stress-assisted Cu-induced lateral growth and metal-free crystallization of Germanium

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