Abstract
We report here the tunneling characteristics (d2V/dI2) of trilayer junctions of the form AlOxAgCuPb and AlOxCuAgPb. The Cu and Ag thicknesses both being 300 Å and the Pb thickness being 3000 Å. The two contributions to the tunneling density of states seen are: (i) the interference effect in the two normal layers showing structures associated with the Pb phonons [1]. This structure is very similar to the one of AlOxAgPb (or AlOxCuPb where the Ag (or Cu) thickness is 600 Å thus showing that the interference effect takes place in both normal metals, (ii) the induced pair potential in the normal layers produces a structure associated with the normal metal phonons. However, only the normal phonons of the metal next to the oxide are seen thus showing that the electron tunneling is a very local probe.
Original language | English (US) |
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Pages (from-to) | 563-565 |
Number of pages | 3 |
Journal | Solid State Communications |
Volume | 31 |
Issue number | 8 |
DOIs | |
State | Published - Aug 1979 |
ASJC Scopus subject areas
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry