Tunneling characteristics of trilayer tunnel junctions

B. F. Donovan-Vojtovic; P. M. Chaikin

doi:10.1016/0038-1098(79)90253-9

Tunneling characteristics of trilayer tunnel junctions

B. F. Donovan-Vojtovic, P. M. Chaikin

Research output: Contribution to journal › Article › peer-review

Abstract

We report here the tunneling characteristics (d²V/dI²) of trilayer junctions of the form AlOxAgCuPb and AlOxCuAgPb. The Cu and Ag thicknesses both being 300 Å and the Pb thickness being 3000 Å. The two contributions to the tunneling density of states seen are: (i) the interference effect in the two normal layers showing structures associated with the Pb phonons [1]. This structure is very similar to the one of AlOxAgPb (or AlOxCuPb where the Ag (or Cu) thickness is 600 Å thus showing that the interference effect takes place in both normal metals, (ii) the induced pair potential in the normal layers produces a structure associated with the normal metal phonons. However, only the normal phonons of the metal next to the oxide are seen thus showing that the electron tunneling is a very local probe.

Original language	English (US)
Pages (from-to)	563-565
Number of pages	3
Journal	Solid State Communications
Volume	31
Issue number	8
DOIs	https://doi.org/10.1016/0038-1098(79)90253-9
State	Published - Aug 1979

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(79)90253-9

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@article{2ea5a6482b884c5fa83c455d9528b510,

title = "Tunneling characteristics of trilayer tunnel junctions",

abstract = "We report here the tunneling characteristics (d2V/dI2) of trilayer junctions of the form AlOxAgCuPb and AlOxCuAgPb. The Cu and Ag thicknesses both being 300 {\AA} and the Pb thickness being 3000 {\AA}. The two contributions to the tunneling density of states seen are: (i) the interference effect in the two normal layers showing structures associated with the Pb phonons [1]. This structure is very similar to the one of AlOxAgPb (or AlOxCuPb where the Ag (or Cu) thickness is 600 {\AA} thus showing that the interference effect takes place in both normal metals, (ii) the induced pair potential in the normal layers produces a structure associated with the normal metal phonons. However, only the normal phonons of the metal next to the oxide are seen thus showing that the electron tunneling is a very local probe.",

author = "Donovan-Vojtovic, {B. F.} and Chaikin, {P. M.}",

note = "Funding Information: Acknowledgements - We would like to thank Jerry Wilson for interesting discussions. This research was supported by NSF through grant DMR 78-12000.",

year = "1979",

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doi = "10.1016/0038-1098(79)90253-9",

language = "English (US)",

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pages = "563--565",

journal = "Solid State Communications",

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publisher = "Elsevier Limited",

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T1 - Tunneling characteristics of trilayer tunnel junctions

AU - Donovan-Vojtovic, B. F.

AU - Chaikin, P. M.

N1 - Funding Information: Acknowledgements - We would like to thank Jerry Wilson for interesting discussions. This research was supported by NSF through grant DMR 78-12000.

PY - 1979/8

Y1 - 1979/8

N2 - We report here the tunneling characteristics (d2V/dI2) of trilayer junctions of the form AlOxAgCuPb and AlOxCuAgPb. The Cu and Ag thicknesses both being 300 Å and the Pb thickness being 3000 Å. The two contributions to the tunneling density of states seen are: (i) the interference effect in the two normal layers showing structures associated with the Pb phonons [1]. This structure is very similar to the one of AlOxAgPb (or AlOxCuPb where the Ag (or Cu) thickness is 600 Å thus showing that the interference effect takes place in both normal metals, (ii) the induced pair potential in the normal layers produces a structure associated with the normal metal phonons. However, only the normal phonons of the metal next to the oxide are seen thus showing that the electron tunneling is a very local probe.

AB - We report here the tunneling characteristics (d2V/dI2) of trilayer junctions of the form AlOxAgCuPb and AlOxCuAgPb. The Cu and Ag thicknesses both being 300 Å and the Pb thickness being 3000 Å. The two contributions to the tunneling density of states seen are: (i) the interference effect in the two normal layers showing structures associated with the Pb phonons [1]. This structure is very similar to the one of AlOxAgPb (or AlOxCuPb where the Ag (or Cu) thickness is 600 Å thus showing that the interference effect takes place in both normal metals, (ii) the induced pair potential in the normal layers produces a structure associated with the normal metal phonons. However, only the normal phonons of the metal next to the oxide are seen thus showing that the electron tunneling is a very local probe.

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DO - 10.1016/0038-1098(79)90253-9

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SP - 563

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JO - Solid State Communications

JF - Solid State Communications

IS - 8

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Tunneling characteristics of trilayer tunnel junctions

Abstract

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