Tunneling characteristics of trilayer tunnel junctions

B. F. Donovan-Vojtovic, P. M. Chaikin

    Research output: Contribution to journalArticlepeer-review


    We report here the tunneling characteristics (d2V/dI2) of trilayer junctions of the form AlOxAgCuPb and AlOxCuAgPb. The Cu and Ag thicknesses both being 300 Å and the Pb thickness being 3000 Å. The two contributions to the tunneling density of states seen are: (i) the interference effect in the two normal layers showing structures associated with the Pb phonons [1]. This structure is very similar to the one of AlOxAgPb (or AlOxCuPb where the Ag (or Cu) thickness is 600 Å thus showing that the interference effect takes place in both normal metals, (ii) the induced pair potential in the normal layers produces a structure associated with the normal metal phonons. However, only the normal phonons of the metal next to the oxide are seen thus showing that the electron tunneling is a very local probe.

    Original languageEnglish (US)
    Pages (from-to)563-565
    Number of pages3
    JournalSolid State Communications
    Issue number8
    StatePublished - Aug 1979

    ASJC Scopus subject areas

    • General Chemistry
    • Condensed Matter Physics
    • Materials Chemistry


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