Two-dimensional GeP-based NIR phototransistor

Ghada Dushaq, Mahmoud Rasras

Research output: Contribution to journalConference articlepeer-review


we demonstrate a gate-tunable photodetector based on multilayerd 2D GeP. Results show high responsivity and relatively low dark current with stable, reproducible, and remarkable broadband spectral response from UV to optical communication wavelengths.

Original languageEnglish (US)
Article numberSW3F.5
JournalOptics InfoBase Conference Papers
StatePublished - 2021
EventCLEO: Science and Innovations, CLEO:S and I 2021 - Part of Conference on Lasers and Electro-Optics, CLEO 2021 - Virtual, Online, United States
Duration: May 9 2021May 14 2021

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials


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