Ultra low temperature epitaxial growth of strained Si directly on Si substrates

D. Shahrjerdi, B. Hekmatshoar, S. W. Bedell, J. A. Ott, M. Hopstaken, D. K. Sadana

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a unique ultralow-temperature plasma enhanced chemical vapor deposition process that enables epitaxial growth of compressively strained silicon directly on silicon substrates. The epitaxial layers were structurally examined using high-resolution x-ray diffraction, transmission electron microscopy and secondary ion-mass spectrometry. The results indicate that the compressive strain of the epitaxial layers stems from the hydrogen incorporation during the growth. In addition, we study the effect of phosphine gas flow on the phosphorus doping incorporation in the epitaxial films at low temperatures. Utilizing our epitaxial process, we demonstrate that heavily phosphorus-doped compressively strained Si films with an active doping concentration of ∼2×1020 cm-3 can be achieved at 150°C.

Original languageEnglish (US)
Title of host publicationSilicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2
Pages31-37
Number of pages7
Edition6
DOIs
StatePublished - 2012
EventInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2 - 221st ECS Meeting - Seattle, WA, United States
Duration: May 6 2012May 10 2012

Publication series

NameECS Transactions
Number6
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherInternational Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2 - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period5/6/125/10/12

ASJC Scopus subject areas

  • Engineering(all)

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