@inproceedings{3fba43784ce24d55ae64aaa635902ecb,
title = "Ultra low temperature epitaxial growth of strained Si directly on Si substrates",
abstract = "We present a unique ultralow-temperature plasma enhanced chemical vapor deposition process that enables epitaxial growth of compressively strained silicon directly on silicon substrates. The epitaxial layers were structurally examined using high-resolution x-ray diffraction, transmission electron microscopy and secondary ion-mass spectrometry. The results indicate that the compressive strain of the epitaxial layers stems from the hydrogen incorporation during the growth. In addition, we study the effect of phosphine gas flow on the phosphorus doping incorporation in the epitaxial films at low temperatures. Utilizing our epitaxial process, we demonstrate that heavily phosphorus-doped compressively strained Si films with an active doping concentration of ∼2×1020 cm-3 can be achieved at 150°C.",
author = "D. Shahrjerdi and B. Hekmatshoar and Bedell, {S. W.} and Ott, {J. A.} and M. Hopstaken and Sadana, {D. K.}",
year = "2012",
doi = "10.1149/1.3700936",
language = "English (US)",
isbn = "9781566779586",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "6",
pages = "31--37",
booktitle = "Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2",
edition = "6",
note = "International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 2 - 221st ES Meeting ; Conference date: 06-05-2012 Through 10-05-2012",
}