Ultrafast carrier trapping of a metal-doped titanium dioxide semiconductor revealed by femtosecond transient absorption spectroscopy

Jingya Sun, Yang Yang, Jafar I. Khan, Erkki Alarousu, Zaibing Guo, Xixiang Zhang, Qiang Zhang, Omar F. Mohammed

Research output: Contribution to journalArticle

Abstract

We explored for the first time the ultrafast carrier trapping of a metal-doped titanium dioxide (TiO2) semiconductor using broad-band transient absorption (TA) spectroscopy with 120 fs temporal resolution. Titanium dioxide was successfully doped layer-by-layer with two metal ions, namely tungsten and cobalt. The time-resolved data demonstrate clearly that the carrier trapping time decreases progressively as the doping concentration increases. A global-fitting procedure for the carrier trapping suggests the appearance of two time components: a fast one that is directly associated with carrier trapping to the defect state in the vicinity of the conduction band and a slow one that is attributed to carrier trapping to the deep-level state from the conduction band. With a relatively long doping deposition time on the order of 30 s, a carrier lifetime of about 1 ps is obtained. To confirm that the measured ultrafast carrier dynamics are associated with electron trapping by metal doping, we explored the carrier dynamics of undoped TiO2. The findings reported here may be useful for the implementation of high-speed optoelectronic applications and fast switching devices.

Original languageEnglish (US)
Pages (from-to)10022-10027
Number of pages6
JournalACS Applied Materials and Interfaces
Volume6
Issue number13
DOIs
StatePublished - Jul 9 2014

Keywords

  • deep-level state
  • metal-doped
  • titanium dioxide
  • transient absorption spectroscopy
  • ultrafast carrier trapping

ASJC Scopus subject areas

  • Materials Science(all)

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