Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices

H. Liu; D. Bedau; D. Backes; J. A. Katine; J. Langer; A. D. Kent

doi:10.1063/1.3527962

Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices

H. Liu, D. Bedau, D. Backes, J. A. Katine, J. Langer, A. D. Kent

Research output: Contribution to journal › Article › peer-review

Abstract

Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to a free layer to achieve large spin-transfer torques and ultrafast energy efficient switching. We have fabricated and studied OST-MRAM devices that incorporate a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer. Reliable switching is observed at room temperature with 0.7 V amplitude pulses of 500 ps duration. The switching is bipolar, occurring for positive and negative polarity pulses, consistent with a precessional reversal mechanism, and requires an energy of less than 450 fJ.

Original language	English (US)
Article number	242510
Journal	Applied Physics Letters
Volume	97
Issue number	24
DOIs	https://doi.org/10.1063/1.3527962
State	Published - Dec 13 2010

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3527962

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abstract = "Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to a free layer to achieve large spin-transfer torques and ultrafast energy efficient switching. We have fabricated and studied OST-MRAM devices that incorporate a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer. Reliable switching is observed at room temperature with 0.7 V amplitude pulses of 500 ps duration. The switching is bipolar, occurring for positive and negative polarity pulses, consistent with a precessional reversal mechanism, and requires an energy of less than 450 fJ.",

author = "H. Liu and D. Bedau and D. Backes and Katine, {J. A.} and J. Langer and Kent, {A. D.}",

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AU - Liu, H.

AU - Bedau, D.

AU - Backes, D.

AU - Katine, J. A.

AU - Langer, J.

AU - Kent, A. D.

PY - 2010/12/13

Y1 - 2010/12/13

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AB - Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to a free layer to achieve large spin-transfer torques and ultrafast energy efficient switching. We have fabricated and studied OST-MRAM devices that incorporate a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer. Reliable switching is observed at room temperature with 0.7 V amplitude pulses of 500 ps duration. The switching is bipolar, occurring for positive and negative polarity pulses, consistent with a precessional reversal mechanism, and requires an energy of less than 450 fJ.

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Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices

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