Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices

H. Liu, D. Bedau, D. Backes, J. A. Katine, J. Langer, A. D. Kent

    Research output: Contribution to journalArticle

    Abstract

    Orthogonal spin-transfer magnetic random access memory (OST-MRAM) uses a spin-polarizing layer magnetized perpendicularly to a free layer to achieve large spin-transfer torques and ultrafast energy efficient switching. We have fabricated and studied OST-MRAM devices that incorporate a perpendicularly magnetized spin-polarizing layer and a magnetic tunnel junction, which consists of an in-plane magnetized free layer and synthetic antiferromagnetic reference layer. Reliable switching is observed at room temperature with 0.7 V amplitude pulses of 500 ps duration. The switching is bipolar, occurring for positive and negative polarity pulses, consistent with a precessional reversal mechanism, and requires an energy of less than 450 fJ.

    Original languageEnglish (US)
    Article number242510
    JournalApplied Physics Letters
    Volume97
    Issue number24
    DOIs
    StatePublished - Dec 13 2010

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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  • Cite this

    Liu, H., Bedau, D., Backes, D., Katine, J. A., Langer, J., & Kent, A. D. (2010). Ultrafast switching in magnetic tunnel junction based orthogonal spin transfer devices. Applied Physics Letters, 97(24), [242510]. https://doi.org/10.1063/1.3527962