Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization

Davood Shahrjerdi; Michael M. Oye; Archie L. Holmes; Sanjay K. Banerjee

doi:10.1063/1.2234837

Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization

Davood Shahrjerdi, Michael M. Oye, Archie L. Holmes, Sanjay K. Banerjee

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Fabrication of GaAs metal-oxide-semiconductor capacitors (MOSCAPs) with an unpinned interface is reported. The MOSCAP structure consists of a few monolayers of germanium grown in a molecular beam epitaxy (MBE) system in order to terminate an MBE-grown silicon-doped (100) GaAs layer. An ex situ HfO ₂ high-κ dielectric with an equivalent oxide thickness of 12 A was deposited by using a dc magnetron sputtering system. A midgap interface state density (D _it) of 5 × 10 ¹¹ eV ^-L cm ^-2 was measured using the high-frequency conductance technique. A rapid thermal annealing study was performed in order to examine the integrity of the gate stack at different temperatures. In addition, a forming gas anneal at 400 °C appears to significantly reduce the midgap D _it revealed by probing the frequency dispersion behavior of the MOSCAPs.

Original language	English (US)
Article number	043501
Journal	Applied Physics Letters
Volume	89
Issue number	4
DOIs	https://doi.org/10.1063/1.2234837
State	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2234837

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@article{7908b8bf9aad466da10d864011bf67ee,

title = "Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization",

abstract = "Fabrication of GaAs metal-oxide-semiconductor capacitors (MOSCAPs) with an unpinned interface is reported. The MOSCAP structure consists of a few monolayers of germanium grown in a molecular beam epitaxy (MBE) system in order to terminate an MBE-grown silicon-doped (100) GaAs layer. An ex situ HfO 2 high-κ dielectric with an equivalent oxide thickness of 12 A was deposited by using a dc magnetron sputtering system. A midgap interface state density (D it) of 5 × 10 11 eV -L cm -2 was measured using the high-frequency conductance technique. A rapid thermal annealing study was performed in order to examine the integrity of the gate stack at different temperatures. In addition, a forming gas anneal at 400 °C appears to significantly reduce the midgap D it revealed by probing the frequency dispersion behavior of the MOSCAPs.",

author = "Davood Shahrjerdi and Oye, {Michael M.} and Holmes, {Archie L.} and Banerjee, {Sanjay K.}",

note = "Funding Information: This work was supported in part by AP2C, SRC, TATP, and AMRC. One of the authors (D.S.) would like to thank D. Q. Kelly for his useful suggestions and discussions.",

year = "2006",

doi = "10.1063/1.2234837",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

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T1 - Unpinned metal gate/high-κ GaAs capacitors

T2 - Fabrication and characterization

AU - Shahrjerdi, Davood

AU - Oye, Michael M.

AU - Holmes, Archie L.

AU - Banerjee, Sanjay K.

N1 - Funding Information: This work was supported in part by AP2C, SRC, TATP, and AMRC. One of the authors (D.S.) would like to thank D. Q. Kelly for his useful suggestions and discussions.

PY - 2006

Y1 - 2006

N2 - Fabrication of GaAs metal-oxide-semiconductor capacitors (MOSCAPs) with an unpinned interface is reported. The MOSCAP structure consists of a few monolayers of germanium grown in a molecular beam epitaxy (MBE) system in order to terminate an MBE-grown silicon-doped (100) GaAs layer. An ex situ HfO 2 high-κ dielectric with an equivalent oxide thickness of 12 A was deposited by using a dc magnetron sputtering system. A midgap interface state density (D it) of 5 × 10 11 eV -L cm -2 was measured using the high-frequency conductance technique. A rapid thermal annealing study was performed in order to examine the integrity of the gate stack at different temperatures. In addition, a forming gas anneal at 400 °C appears to significantly reduce the midgap D it revealed by probing the frequency dispersion behavior of the MOSCAPs.

AB - Fabrication of GaAs metal-oxide-semiconductor capacitors (MOSCAPs) with an unpinned interface is reported. The MOSCAP structure consists of a few monolayers of germanium grown in a molecular beam epitaxy (MBE) system in order to terminate an MBE-grown silicon-doped (100) GaAs layer. An ex situ HfO 2 high-κ dielectric with an equivalent oxide thickness of 12 A was deposited by using a dc magnetron sputtering system. A midgap interface state density (D it) of 5 × 10 11 eV -L cm -2 was measured using the high-frequency conductance technique. A rapid thermal annealing study was performed in order to examine the integrity of the gate stack at different temperatures. In addition, a forming gas anneal at 400 °C appears to significantly reduce the midgap D it revealed by probing the frequency dispersion behavior of the MOSCAPs.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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M1 - 043501

ER -

Unpinned metal gate/high-κ GaAs capacitors: Fabrication and characterization

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