Using self-assembly and selective chemical vapor deposition for precise positioning of individual germanium nanoparticles on hafnia

Shawn S. Coffee, Wyatt A. Winkenwerder, Scott K. Stanley, Shahrjerdi Davood, Sanjay K. Banerjee, John G. Ekerdt

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Germanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ∼20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b- methyl methacrylate) diblock copolymer was employed to pattern the SiO 2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO 2 pore walls.

Original languageEnglish (US)
Title of host publicationNanomanufacturing
PublisherMaterials Research Society
Pages158-163
Number of pages6
ISBN (Print)1558998780, 9781558998780
DOIs
StatePublished - 2006
Event2006 MRS Spring Meeting - San Francisco, CA, United States
Duration: Apr 17 2006Apr 21 2006

Publication series

NameMaterials Research Society Symposium Proceedings
Volume921
ISSN (Print)0272-9172

Other

Other2006 MRS Spring Meeting
CountryUnited States
CitySan Francisco, CA
Period4/17/064/21/06

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Coffee, S. S., Winkenwerder, W. A., Stanley, S. K., Davood, S., Banerjee, S. K., & Ekerdt, J. G. (2006). Using self-assembly and selective chemical vapor deposition for precise positioning of individual germanium nanoparticles on hafnia. In Nanomanufacturing (pp. 158-163). (Materials Research Society Symposium Proceedings; Vol. 921). Materials Research Society. https://doi.org/10.1557/proc-0921-t07-09