@inproceedings{e5d461387c59424ea993602b111026b4,
title = "Using self-assembly and selective chemical vapor deposition for precise positioning of individual germanium nanoparticles on hafnia",
abstract = "Germanium nanoparticle nucleation was studied in organized arrays on HfO2 using a SiO2 thin film mask with ∼20-24 nm pores and a 6×1010 cm-2 pore density. Poly(styrene-b- methyl methacrylate) diblock copolymer was employed to pattern the SiO 2 film. Hot wire chemical vapor deposition produced Ge nanoparticles using 4-19 monolayer Ge exposures. By seeding adatoms on HfO2 at room temperature before growth and varying growth temperatures between 725-800 K, nanoparticle size was demonstrated to be limited by Ge etching of SiO 2 pore walls.",
author = "Coffee, {Shawn S.} and Winkenwerder, {Wyatt A.} and Stanley, {Scott K.} and Shahrjerdi Davood and Banerjee, {Sanjay K.} and Ekerdt, {John G.}",
year = "2006",
doi = "10.1557/proc-0921-t07-09",
language = "English (US)",
isbn = "1558998780",
series = "Materials Research Society Symposium Proceedings",
publisher = "Materials Research Society",
pages = "158--163",
booktitle = "Nanomanufacturing",
note = "2006 MRS Spring Meeting ; Conference date: 17-04-2006 Through 21-04-2006",
}