Valence band localized states in double quantum wells from first principles

Arcesio Castañeda Medina, Rafael M. Gutiérrez

Research output: Contribution to journalArticlepeer-review


The electrostatic potentials and electronic structure of an AlAs/GaAs double quantum well (DQW) heterostructure are determined through ab initio computations. The study of the potentials along the growth direction establishes a clear relation between the microscopic structure and the relevant macroscopic properties of the heterostructure, namely, the DQW dimensions and the band offsets. At nanometric scale, the one electron effective potential energy is a DQW and the valence band edge electronic states are confined along the growth direction. Such states coincide qualitatively with those analytically obtained through the so-called envelope function/effective mass approximation.

Original languageEnglish (US)
Pages (from-to)2877-2883
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Issue number12
StatePublished - Dec 2011


  • Density functional theory
  • Heterostructures
  • Quantum wells

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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