Variability in carbon nanotube transistors: Improving device-to-device consistency

Aaron D. Franklin, George S. Tulevski, Shu Jen Han, Davood Shahrjerdi, Qing Cao, Hong Yu Chen, H. S.Philip Wong, Wilfried Haensch

Research output: Contribution to journalArticlepeer-review


The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that covering the nanotube channel proves highly effective and robust at improving device-to-device consistency - hysteresis and threshold voltage variation are reduced by an average of 84 and 53%, respectively. The effect of gate and drain-source bias on hysteresis is considered, showing strong dependence that must be accounted for when analyzing the effectiveness of a passivation layer. These results provide both key insight into the origin of variability in carbon nanotube transistors and a promising path for resolving this significant obstacle.

Original languageEnglish (US)
Pages (from-to)1109-1115
Number of pages7
JournalACS nano
Issue number2
StatePublished - Feb 28 2012


  • carbon nanotube transistors
  • hysteresis
  • threshold voltage
  • variability

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • General Physics and Astronomy


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