Vertical (3-D) flash memory with SiGe nanocrystal floating gate

J. Sarkar; S. Dey; Y. Liu; D. Shahrjerdi; D. Q. Kelly; S. K. Banerjee

Vertical (3-D) flash memory with SiGe nanocrystal floating gate

J. Sarkar, S. Dey, Y. Liu, D. Shahrjerdi, D. Q. Kelly, S. K. Banerjee

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	64th DRC 2006 - Device Research Conference
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	267-268
Number of pages	2
ISBN (Electronic)	0780397495, 9780780397491
State	Published - 2006
Event	64th Device Research Conference, DRC 2006 - Parker, United States Duration: Jun 26 2006 → Jun 28 2006

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Conference

Conference	64th Device Research Conference, DRC 2006
Country/Territory	United States
City	Parker
Period	6/26/06 → 6/28/06

ASJC Scopus subject areas

Electrical and Electronic Engineering

Cite this

Sarkar, J, Dey, S, Liu, Y, Shahrjerdi, D, Kelly, DQ & Banerjee, SK 2006, Vertical (3-D) flash memory with SiGe nanocrystal floating gate. in 64th DRC 2006 - Device Research Conference. Device Research Conference - Conference Digest, DRC, Institute of Electrical and Electronics Engineers Inc., pp. 267-268, 64th Device Research Conference, DRC 2006, Parker, United States, 6/26/06.

@inproceedings{22630ce213a646598fdb10804a4b555c,

title = "Vertical (3-D) flash memory with SiGe nanocrystal floating gate",

author = "J. Sarkar and S. Dey and Y. Liu and D. Shahrjerdi and Kelly, {D. Q.} and Banerjee, {S. K.}",

year = "2006",

language = "English (US)",

series = "Device Research Conference - Conference Digest, DRC",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "267--268",

booktitle = "64th DRC 2006 - Device Research Conference",

note = "64th Device Research Conference, DRC 2006 ; Conference date: 26-06-2006 Through 28-06-2006",

}

TY - GEN

T1 - Vertical (3-D) flash memory with SiGe nanocrystal floating gate

AU - Sarkar, J.

AU - Dey, S.

AU - Liu, Y.

AU - Shahrjerdi, D.

AU - Kelly, D. Q.

AU - Banerjee, S. K.

PY - 2006

Y1 - 2006

UR - http://www.scopus.com/inward/record.url?scp=77955488027&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955488027&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77955488027

T3 - Device Research Conference - Conference Digest, DRC

SP - 267

EP - 268

BT - 64th DRC 2006 - Device Research Conference

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 64th Device Research Conference, DRC 2006

Y2 - 26 June 2006 through 28 June 2006

ER -

Vertical (3-D) flash memory with SiGe nanocrystal floating gate

Publication series

Conference

ASJC Scopus subject areas

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Cite this