Vertical flash memory devices with protein-assembled nanocrystal floating gate and AI 2O 3 control oxide

F. Ferdousi, J. Sarkar, S. Tang, D. Shahrjerdi, T. Akyol, J. P. Donnelly, E. Tutuc, S. K. Banerjee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication66th DRC Device Research Conference Digest, DRC 2008
Pages57-58
Number of pages2
DOIs
StatePublished - 2008
Event66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States
Duration: Jun 23 2008Jun 25 2008

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other66th DRC Device Research Conference Digest, DRC 2008
CountryUnited States
CitySanta Barbara, CA
Period6/23/086/25/08

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Ferdousi, F., Sarkar, J., Tang, S., Shahrjerdi, D., Akyol, T., Donnelly, J. P., Tutuc, E., & Banerjee, S. K. (2008). Vertical flash memory devices with protein-assembled nanocrystal floating gate and AI 2O 3 control oxide. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 57-58). [4800732] (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800732