Vertical flash memory devices with protein-assembled nanocrystal floating gate and AI 2O 3 control oxide

F. Ferdousi; J. Sarkar; S. Tang; D. Shahrjerdi; T. Akyol; J. P. Donnelly; E. Tutuc; S. K. Banerjee

doi:10.1109/DRC.2008.4800732

Vertical flash memory devices with protein-assembled nanocrystal floating gate and AI ₂O ₃ control oxide

F. Ferdousi, J. Sarkar, S. Tang, D. Shahrjerdi, T. Akyol, J. P. Donnelly, E. Tutuc, S. K. Banerjee

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	66th DRC Device Research Conference Digest, DRC 2008
Pages	57-58
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2008.4800732
State	Published - 2008
Event	66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States Duration: Jun 23 2008 → Jun 25 2008

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	66th DRC Device Research Conference Digest, DRC 2008
Country/Territory	United States
City	Santa Barbara, CA
Period	6/23/08 → 6/25/08

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/DRC.2008.4800732

Cite this

Ferdousi, F., Sarkar, J., Tang, S., Shahrjerdi, D., Akyol, T., Donnelly, J. P., Tutuc, E., & Banerjee, S. K. (2008). Vertical flash memory devices with protein-assembled nanocrystal floating gate and AI ₂O ₃ control oxide. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 57-58). Article 4800732 (Device Research Conference - Conference Digest, DRC). https://doi.org/10.1109/DRC.2008.4800732

Vertical flash memory devices with protein-assembled nanocrystal floating gate and AI ₂O ₃ control oxide. / Ferdousi, F.; Sarkar, J.; Tang, S. et al.
66th DRC Device Research Conference Digest, DRC 2008. 2008. p. 57-58 4800732 (Device Research Conference - Conference Digest, DRC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ferdousi, F, Sarkar, J, Tang, S, Shahrjerdi, D, Akyol, T, Donnelly, JP, Tutuc, E & Banerjee, SK 2008, Vertical flash memory devices with protein-assembled nanocrystal floating gate and AI ₂O ₃ control oxide. in 66th DRC Device Research Conference Digest, DRC 2008., 4800732, Device Research Conference - Conference Digest, DRC, pp. 57-58, 66th DRC Device Research Conference Digest, DRC 2008, Santa Barbara, CA, United States, 6/23/08. https://doi.org/10.1109/DRC.2008.4800732

@inproceedings{a8a294fcb58f41d9b9453e8207d378d7,

title = "Vertical flash memory devices with protein-assembled nanocrystal floating gate and AI 2O 3 control oxide",

author = "F. Ferdousi and J. Sarkar and S. Tang and D. Shahrjerdi and T. Akyol and Donnelly, {J. P.} and E. Tutuc and Banerjee, {S. K.}",

year = "2008",

doi = "10.1109/DRC.2008.4800732",

language = "English (US)",

isbn = "9781424419425",

series = "Device Research Conference - Conference Digest, DRC",

pages = "57--58",

booktitle = "66th DRC Device Research Conference Digest, DRC 2008",

note = "66th DRC Device Research Conference Digest, DRC 2008 ; Conference date: 23-06-2008 Through 25-06-2008",

}

TY - GEN

T1 - Vertical flash memory devices with protein-assembled nanocrystal floating gate and AI 2O 3 control oxide

AU - Ferdousi, F.

AU - Sarkar, J.

AU - Tang, S.

AU - Shahrjerdi, D.

AU - Akyol, T.

AU - Donnelly, J. P.

AU - Tutuc, E.

AU - Banerjee, S. K.

PY - 2008

Y1 - 2008

UR - http://www.scopus.com/inward/record.url?scp=64849110243&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=64849110243&partnerID=8YFLogxK

U2 - 10.1109/DRC.2008.4800732

DO - 10.1109/DRC.2008.4800732

M3 - Conference contribution

AN - SCOPUS:64849110243

SN - 9781424419425

T3 - Device Research Conference - Conference Digest, DRC

SP - 57

EP - 58

BT - 66th DRC Device Research Conference Digest, DRC 2008

T2 - 66th DRC Device Research Conference Digest, DRC 2008

Y2 - 23 June 2008 through 25 June 2008

ER -