Abstract
Fundamental understanding of radical-surface interactions during plasma deposition of Si thin films is essential for developing rational deposition strategies. We have developed a visualization tool for monitoring the surface bond strain evolution during film growth. This tool is used to examine the local structural changes in the vicinity of the growth surface when a chemical reaction occurs during molecular-dynamics (MD) simulations of Si thin-film deposition and aids in the analysis of radical-surface interactions. Results are presented for the surface bond strain distribution when an SiH3 radical inserts into an Si-Si dimer on an H-terminated Si(001)-(2 × 1) surface during the initial stage of deposition. This type of analysis is particularly helpful in understanding the reactions and migration of the SiH3 radical on the surface of plasma-deposited hydrogenated amorphous Si films.
Original language | English (US) |
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Pages (from-to) | 112-113 |
Number of pages | 2 |
Journal | IEEE Transactions on Plasma Science |
Volume | 30 |
Issue number | 1 I |
DOIs | |
State | Published - Feb 2002 |
Keywords
- Amorphous silicon
- Bond strain
- Molecular dynamics
- Plasma CVD
- Radical-surface interactions
- Silane
- Surface relaxation
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Condensed Matter Physics