Visualizing the evolution of surface morphology and surface bond strain during plasma deposition of amorphous silicon thin films

Mayur S. Valipa, Eray S. Aydil, Dimitrios Maroudas

Research output: Contribution to journalArticle

Abstract

Fundamental understanding of atomic-scale processes that determine the surface morphology of hydrogenated amorphous silicon (a-Si:H) thin films during plasma deposition is essential to develop systematic strategies for depositing smooth device-quality a-Si:H films. We have developed visualization tools for monitoring the evolution of surface morphology, atomic coordination, and bond strain distribution during radical precursor migration on a-Si:H surfaces; these tools are used here to study the mechanisms of SiH3 diffusion on the a-Si:H surface and elucidate valley-filling phenomena leading to smooth a-Si:H films. We present surface characterization results during a radical migration trajectory representative of the early stage of plasma deposition: The SiH3 precursor is impinged on a hill and migrates until it is incorporated into a nearby valley on the a-Si:H surface.

Original languageEnglish (US)
Pages (from-to)228-229
Number of pages2
JournalIEEE Transactions on Plasma Science
Volume33
Issue number2 I
DOIs
StatePublished - Apr 2005

Keywords

  • Hyrdrogenated amorphous silicon thin films
  • Molecular dynamics
  • Plasma CVD
  • Surface morphology
  • Surface reactors
  • Surface strain

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Visualizing the evolution of surface morphology and surface bond strain during plasma deposition of amorphous silicon thin films'. Together they form a unique fingerprint.

  • Cite this