Waveguide integrated Ge p-i-n photodetectors on a silicon-on-insulator platform

J. F. Liu, D. Ahn, C. Y. Hong, D. Pan, S. Jongthammanurak, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, D. Carothers, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, D. M. Gill, A. E. White

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present selectively grown Ge p-i-n photodetectors coupled to high index contrast Si(core)/SiO2(cladding) waveguides on a silicon-on-insulator (SOI) platform. Two coupling schemes, namely butt-coupling and vertical coupling, were demonstrated in this study. With the butt-coupling scheme we have achieved a high responsivity of 1.0 A/W at 1520 nm and a 3dB bandwidth greater than 4.5 GHz at 1550 nm. With the vertical coupling scheme, where the light couples from a Si waveguide evanescently to the Ge detector on top of it, a responsivity of 0.22A/W and a 3dB bandwidth of ∼1.5 GHz have been demonstrated at 1550 nm. The devices were fabricated on a standard 180 nm industrial complementary metal oxide semiconductor production (CMOS) line, and can be integrated with CMOS circuitry for electronic and photonic integrated circuits.

Original languageEnglish (US)
Title of host publication2006 Optics Valley of China International Symposium on Optoelectronics, OVC EXPO
Pages1-4
Number of pages4
DOIs
StatePublished - 2006
Event2006 Optics Valley of China International Symposium on Optoelectronics, OVC EXPO - Wuhan, China
Duration: Nov 1 2006Nov 4 2006

Publication series

Name2006 Optics Valley of China International Symposium on Optoelectronics, OVC EXPO

Other

Other2006 Optics Valley of China International Symposium on Optoelectronics, OVC EXPO
CountryChina
CityWuhan
Period11/1/0611/4/06

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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