@inproceedings{a5654d1668724438aed992cde48e737b,
title = "Waveguide integrated Ge p-i-n photodetectors on a silicon-on-insulator platform",
abstract = "We present selectively grown Ge p-i-n photodetectors coupled to high index contrast Si(core)/SiO2(cladding) waveguides on a silicon-on-insulator (SOI) platform. Two coupling schemes, namely butt-coupling and vertical coupling, were demonstrated in this study. With the butt-coupling scheme we have achieved a high responsivity of 1.0 A/W at 1520 nm and a 3dB bandwidth greater than 4.5 GHz at 1550 nm. With the vertical coupling scheme, where the light couples from a Si waveguide evanescently to the Ge detector on top of it, a responsivity of 0.22A/W and a 3dB bandwidth of ∼1.5 GHz have been demonstrated at 1550 nm. The devices were fabricated on a standard 180 nm industrial complementary metal oxide semiconductor production (CMOS) line, and can be integrated with CMOS circuitry for electronic and photonic integrated circuits.",
author = "Liu, {J. F.} and D. Ahn and Hong, {C. Y.} and D. Pan and S. Jongthammanurak and M. Beals and Kimerling, {L. C.} and J. Michel and Pomerene, {A. T.} and D. Carothers and C. Hill and M. Jaso and Tu, {K. Y.} and Chen, {Y. K.} and S. Patel and M. Rasras and Gill, {D. M.} and White, {A. E.}",
year = "2006",
doi = "10.1109/OVCISO.2006.302697",
language = "English (US)",
isbn = "1424408164",
series = "2006 Optics Valley of China International Symposium on Optoelectronics, OVC EXPO",
pages = "1--4",
booktitle = "2006 Optics Valley of China International Symposium on Optoelectronics, OVC EXPO",
note = "2006 Optics Valley of China International Symposium on Optoelectronics, OVC EXPO ; Conference date: 01-11-2006 Through 04-11-2006",
}