Abstract
We demonstrate a fully CMOS processed Ge p-i-n photodetector integrated with a Si waveguide on a SOI platform with a high responsivity of 1.0 A/W at λ=1520nm, and a 3 dB bandwidth of >4.5 GHz measured at λ=1550 nm.
Original language | English (US) |
---|---|
Article number | 1708203 |
Pages (from-to) | 173-175 |
Number of pages | 3 |
Journal | IEEE International Conference on Group IV Photonics GFP |
DOIs | |
State | Published - 2006 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Ceramics and Composites
- Electronic, Optical and Magnetic Materials