Waveguide-integrated Ge p-i-n photodetectors on SOI platform

J. F. Liu, D. Pan, S. Jongthammanurak, D. Ahn, C. Y. Hong, M. Beals, L. C. Kimerling, J. Michel, A. T. Pomerene, C. Hill, M. Jaso, K. Y. Tu, Y. K. Chen, S. Patel, M. Rasras, A. White, D. M. Gill

Research output: Contribution to journalArticle

Abstract

We demonstrate a fully CMOS processed Ge p-i-n photodetector integrated with a Si waveguide on a SOI platform with a high responsivity of 1.0 A/W at λ=1520nm, and a 3 dB bandwidth of >4.5 GHz measured at λ=1550 nm.

Original languageEnglish (US)
Article number1708203
Pages (from-to)173-175
Number of pages3
JournalIEEE International Conference on Group IV Photonics GFP
DOIs
StatePublished - 2006

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Ceramics and Composites
  • Electronic, Optical and Magnetic Materials

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    Liu, J. F., Pan, D., Jongthammanurak, S., Ahn, D., Hong, C. Y., Beals, M., Kimerling, L. C., Michel, J., Pomerene, A. T., Hill, C., Jaso, M., Tu, K. Y., Chen, Y. K., Patel, S., Rasras, M., White, A., & Gill, D. M. (2006). Waveguide-integrated Ge p-i-n photodetectors on SOI platform. IEEE International Conference on Group IV Photonics GFP, 173-175. [1708203]. https://doi.org/10.1109/group4.2006.1708203