Zero bias anomalies in metal-semiconductor tunnel junctions

E. L. Wolf, D. L. Losee

Research output: Contribution to journalArticlepeer-review

Abstract

Lightly screened neutral donors at the inner edge of the depletion region account for intrinsic Appelbaum-Anderson zero bias anomalies in metal-semiconductor tunnel junctions. A negative g-shift and a natural Zeeman level width h {combining short solidus overlay} T1 for the localized magnetic moment are implied by the Appelbaum theory. These features are observed in the experimental results.

Original languageEnglish (US)
Pages (from-to)665-668
Number of pages4
JournalSolid State Communications
Volume7
Issue number9
DOIs
StatePublished - May 1 1969

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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