Zero bias anomalies in metal-semiconductor tunnel junctions

E. L. Wolf; D. L. Losee

doi:10.1016/0038-1098(69)90588-2

Zero bias anomalies in metal-semiconductor tunnel junctions

E. L. Wolf, D. L. Losee

Applied Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Lightly screened neutral donors at the inner edge of the depletion region account for intrinsic Appelbaum-Anderson zero bias anomalies in metal-semiconductor tunnel junctions. A negative g-shift and a natural Zeeman level width h {combining short solidus overlay} T₁ for the localized magnetic moment are implied by the Appelbaum theory. These features are observed in the experimental results.

Original language	English (US)
Pages (from-to)	665-668
Number of pages	4
Journal	Solid State Communications
Volume	7
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(69)90588-2
State	Published - May 1 1969

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(69)90588-2

Cite this

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title = "Zero bias anomalies in metal-semiconductor tunnel junctions",

abstract = "Lightly screened neutral donors at the inner edge of the depletion region account for intrinsic Appelbaum-Anderson zero bias anomalies in metal-semiconductor tunnel junctions. A negative g-shift and a natural Zeeman level width h {combining short solidus overlay} T1 for the localized magnetic moment are implied by the Appelbaum theory. These features are observed in the experimental results.",

author = "Wolf, {E. L.} and Losee, {D. L.}",

year = "1969",

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AU - Losee, D. L.

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N2 - Lightly screened neutral donors at the inner edge of the depletion region account for intrinsic Appelbaum-Anderson zero bias anomalies in metal-semiconductor tunnel junctions. A negative g-shift and a natural Zeeman level width h {combining short solidus overlay} T1 for the localized magnetic moment are implied by the Appelbaum theory. These features are observed in the experimental results.

AB - Lightly screened neutral donors at the inner edge of the depletion region account for intrinsic Appelbaum-Anderson zero bias anomalies in metal-semiconductor tunnel junctions. A negative g-shift and a natural Zeeman level width h {combining short solidus overlay} T1 for the localized magnetic moment are implied by the Appelbaum theory. These features are observed in the experimental results.

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DO - 10.1016/0038-1098(69)90588-2

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JO - Solid State Communications

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Zero bias anomalies in metal-semiconductor tunnel junctions

Abstract

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